advanced power n-channel enhancement mode electronics corp. power mosfet 100% avalanche test bv dss 700v fast switching characteristic r ds(on) 0.85 simple drive requirement i d 8.3a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds drain-source voltage v v gs gate-source voltage v i d @t c =25 continuous drain current, v gs @ 10v a i d @t c =100 continuous drain current, v gs @ 10v a i dm pulsed drain current 1 a p d @t c =25 total power dissipation w w/ p d @t a =25 total power dissipation w e as single pulse avalanche energy 2 mj i ar avalanche current a t stg t j operating junction temperature range thermal data symbol value units rthj-c maximum thermal resistance, junction-case 3 /w rthj-a maximum thermal resistance, junction-ambient 65 /w data & specifications subject to change without notice 32 rating 700 parameter 5.2 1.92 storage temperature range AP09N70I-H-HF -55 to 150 8.3 40 42 + 30 halogen-free product 1 linear derating factor 0.34 8 -55 to 150 parameter 201006082 g d s g d s to-220cfm(i) a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-220cfm isolation package is widely preferred for all commercial-industrial through hole applications.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 700 - - v bv dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.6 - v/ r ds(on) static drain-source on-resistance 3 v gs =10v, i d =4a - - 0.85 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =50v, i d =4.5a - 4.5 - s i dss drain-source leakage current v ds =600v, v gs =0v - - 10 ua drain-source leakage current (t j =125 o c) v ds =480v , v gs =0v - - 500 ua i gss gate-source leakage v gs =+ 30v, v ds =0v - - + 100 na q g total gate charge 3 i d =9a - 44 - nc q gs gate-source charge v ds =480v - 11 - nc q gd gate-drain ("miller") charge v gs =10v - 12 - nc t d(on) turn-on delay time 3 v dd =300v - 19 - ns t r rise time i d =9a - 21 - ns t d(off) turn-off delay time r g =10 ,v gs =10v - 56 - ns t f fall time r d =34 -24- ns c iss input capacitance v gs =0v - 2660 - pf c oss output capacitance v ds =25v - 170 - pf c rss reverse transfer capacitance f=1.0mhz - 10 - pf source-drain diode symbol parameter test conditions min. typ. max. units i s continuous source current ( body diode ) v d =v g =0v , v s =1.5v - - 8.3 a i sm pulsed source current ( body diode ) 1 --40 a v sd forward on voltage 3 t j =25 , i s =9a, v gs =0v - - 1.5 v notes: 1.pulse width limited by max. junction temperature. 2.starting t j =25 o c , v dd =50v , l=1mh , r g =25 , i as =8a. 3.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. AP09N70I-H-HF 2
a p09n70i-h-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-resistance temperature v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0.8 0.9 1 1.1 1.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss (v) 0 1 2 3 -50 0 50 100 150 t j , junction temperature ( o c ) normalized r ds(on) i d =4.5a v g =10v 0 2 4 6 8 10 0 4 8 12 16 20 24 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 4.0v v g =3.5v 10v 6.0v 5.0v 4.5v 0 2 4 6 8 10 036912 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 6.0v 5.0v 4.5v 4.0v v g =3.5v 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j = 150 o c t j = 25 o c 1 2 3 4 5 -50 0 50 100 150 t j , junction temperature ( o c) v gs(th) (v)
AP09N70I-H-HF fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 0.01 0.1 1 10 100 1 10 100 1000 10000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0 4 8 12 16 0 204060 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =9a v ds =320v v ds =400v v ds =480v 1 100 10000 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge operation in this area limited by r ds(on)
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